smd type ic smd type ic pin configuration absolute maximum ratings t a =25 parameter symbol n-channel p-channel unit drain-source voltage v ds 20 -20 v gate-source voltage v gs 12 12 v continuous drain current (t j =150 )* t a =25 7.1 6.2 a t a =70 5.7 4.9 a pulsed drain current i dm 40 40 a continuous source current (diode conduction)* i s 1.7 -1.7 a maximum power dissipation* t a =25 w t a =70 w operating junction and storage temperature range t j ,t stg maximum junction-to-ambient * r thja /w *surface mounted on fr4 board, t 10 sec. 62.5 -55to150 i d p d 2 1.3 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type ic KI4562DY smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
smd type ic smd type ic electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d = 250 a n-ch 0.6 v ds =v gs ,i d = -250 a p-ch -0.6 v ds =0vv gs = 12 v n-ch 100 v ds =0vv gs = 12 v p-ch 100 v ds = 20v, v gs =0v n-ch 1 v ds =-20v,v gs =0v p-ch -1 v ds =20v,v gs =0v,t j =55 n-ch 5 v ds =-20v,v gs =0v,t j =55 p-ch -5 v ds 5v,v gs =4.5v n-ch 20 v ds -5 v, v gs =-4.5v p-ch -20 v gs =4.5v,i d = 7.1a n-ch 0.019 0.025 v gs =-4.5v,i d = -6.2a p-ch 0.027 0.033 v gs =2.5v,i d = 6.0a n-ch 0.025 0.035 v gs =-2.5v,i d = -5.0a p-ch 0.040 0.050 v ds =10v,i d =7.1a n-ch 27 v ds =-10v,i d = -6.2a p-ch 20 i s =1.7a,v gs =0v n-ch 1.2 i s =-1.7a,v gs =0v p-ch -1.2 n-channel n-ch 25 50 v ds =10v,v gs =4.5v,i d =7.1a p-ch 22 35 n-ch 6.5 p-channel p-ch 7 v ds =-10v,v gs =-4.52v,i d = -6.2a n-ch 4 p-ch 3.5 n channel n-ch 40 60 v dd =10v,r l =10 p-ch 27 50 i d =1a,v gen =4.5v,r g =6 n-ch 40 60 p-ch 32 50 p-channel n-ch 90 150 v dd =-10v,r l =10 p-ch 95 150 i d =-1a,v gen =-4.5v,r g =6 n-ch 40 60 p-ch 45 70 i f =1.7a,d i /d t = 100 a/ s n-ch 40 80 i f =-1.7a,d i /d t = 100 a/ s p-ch 40 80 * pulse test; pulse width 300 s, duty cycle 2%. turn off delay time r ds(on) drainsourceonstateresistance* diode forward voltage* total gate charge gate source charge gate drain charge v sd q gs q gd g fs forward transconductance* rise time testconditons q g gate threshold voltage gate body leakage zero gate voltage drain current i d(on) on state drain currenta v na a v gs( th) i gss i dss a s v nc source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time KI4562DY 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
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